| PART |
Description |
Maker |
| NE5511279A NE5511279A-T1A NE5511279A-T1 |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET 邻舍7.5 V UHF频段射频功率硅劳工处场效应晶体管
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| NE5511279A |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
California Eastern Labs
|
| UPG2024TQ-E1-A |
NECs GaAs MMIC DPDT SWITCHES FOR 5 GHz BAND WIRELESS LAN
|
California Eastern Laboratories
|
| UPC1688 UPC1688G-TI UPC1688G-T1-A |
NECs 1.0 GHz BANDWIDTH SILICON MMIC AMPLIFIER 邻舍1.0 GHz的带宽硅MMIC放大
100 MHz - 700 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 39, SOT-143, 4 PIN
|
NEC, Corp.
Duracell
NEC[NEC]
|
| PS7200U-1A-F4 PS7200U-1A PS7200U-1A-E3 PS7200U-1A- |
NECs 4-PIN SOP LOW OFF-STATE LEAKAGE CURRENT 1-ch OPTICAL COUPLED MOS FET
|
CEL[California Eastern Labs]
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| NE46134-T1-AZ |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR
|
California Eastern Laboratories
|
| APT6017WVR |
POWER MOS V 600V 31.5A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT8058HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 13.5A 0.580 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT1201R6 APT1201R6B APT1201R6BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 8A 1.600 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
